SiC Epitaxy

Features 15mm pitch 9pts(EE=4mm) Thickness by FT-IR Carrier Concentration by Hg-CV Parameter Item Specification Tolerance Typical Remark Diameter 6”(150mm) – – Poly-type 4H – – Surface (0001) Silicon face – – Off orientation 4 degree-off – – Conductivity N-type – – Dopant...
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