SiC Epitaxy

Features 15mm pitch 9pts(EE=4mm) Thickness by FT-IR Carrier Concentration by Hg-CV Parameter Item Specification Tolerance Typical Remark Diameter 6”(150mm) – – Poly-type 4H – – Surface (0001) Silicon face – – Off orientation 4 degree-off – – Conductivity N-type – – Dopant...
1200V 80 mOhm N-Channel SiC MOSFET

1200V, 80m Ohm N-Channel SiC MOSFET

Features Optimized for high-frequency, high- efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operations at all temperatures Ultra-low on-resistance Applications High-frequency applications Solar Inverters Switch Mode Power Supplies UPS Motor...
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