1200V, 80m Ohm N-Channel SiC MOSFET

Features

  • Optimized for high-frequency, high- efficiency applications
  • Extremely low gate charge and output capacitance
  • Low gate resistance for high-frequency
  • switching
  • Normally-off operations at all temperatures
  • Ultra-low on-resistance

Applications

  • High-frequency applications
  • Solar Inverters
  • Switch Mode Power Supplies
  • UPS
  • Motor Drives
  • High Voltage DC/DC Converters
  • Battery Chargers
  • Induction Heating

Product Summary

Characteristic Value Unit
VDS 1200 V
Typical RDS(ON) 80 mOhm
ID (TC    100 °C) 25 A

Maximum Ratings(TJ=25℃)

Characteristic Symbol Conditions Value Unit
Drain-Source Voltage VDS VGS  = 0 V 1200 V
Continuous Drain Current ID VGS  = 20 V 35 A
Gate-Source Voltage VGS Recommended DC operating values -5 to +20 V
Operating Junction Temperature TJ -40 to +175 ℃
Storage Temperature TSTG -40 to +175 ℃

Electrical Characteristics in C/P test(TJ=25℃)

Characteristic Symbol Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 µA 1200 V
Zero Gate Voltage Drain Current VF VDS = 1200, VGS = 0 V 1 100 μA
Gate Leakage Current IGSS,F VGS = 22 V, VDS = 0 V 100 nA
IGSS,R VGS = -6 V, VDS = 0 V 100
Drain-Source On-State Resistance RDS(ON) ID = 20 A, VGS = 20 V 80 100 m
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 10 mA 1.8 2.8 4.0 V

Chip Parameters and Die Drawing

Chip Size (with S/L) 2500 μm X 2500 μm
Pad Size
Wafer Thickness 100μm +/- 10μm
Wafer Diameter 150 mm (6 inch)
Gross Die 1200 EA
Front Metallization
Back Metallization