Features
- Optimized for high-frequency, high- efficiency applications
- Extremely low gate charge and output capacitance
- Low gate resistance for high-frequency
- switching
- Normally-off operations at all temperatures
- Ultra-low on-resistance
Applications
- High-frequency applications
- Solar Inverters
- Switch Mode Power Supplies
- UPS
- Motor Drives
- High Voltage DC/DC Converters
- Battery Chargers
- Induction Heating
Product Summary
| Characteristic | Value | Unit |
| VDS | 1200 | V |
| Typical RDS(ON) | 80 | mOhm |
| ID (TC 100 °C) | 25 | A |
Maximum Ratings（TJ=25℃）
| Characteristic | Symbol | Conditions | Value | Unit |
| Drain-Source Voltage | VDS | VGS = 0 V | 1200 | V |
| Continuous Drain Current | ID | VGS = 20 V | 35 | A |
| Gate-Source Voltage | VGS | Recommended DC operating values | -5 to +20 | V |
| Operating Junction Temperature | TJ | -40 to +175 ℃ | ||
| Storage Temperature | TSTG | -40 to +175 ℃ | ||
Electrical Characteristics in C/P test（TJ=25℃）
| Characteristic | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 100 µA | 1200 | — | — | V |
| Zero Gate Voltage Drain Current | VF | VDS = 1200, VGS = 0 V | — | 1 | 100 | μA |
| Gate Leakage Current | IGSS,F | VGS = 22 V, VDS = 0 V | — | — | 100 | nA |
| IGSS,R | VGS = -6 V, VDS = 0 V | — | — | 100 | ||
| Drain-Source On-State Resistance | RDS(ON) | ID = 20 A, VGS = 20 V | — | 80 | 100 | m |
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 10 mA | 1.8 | 2.8 | 4.0 | V |
Chip Parameters and Die Drawing
| Chip Size (with S/L) | 2500 μm X 2500 μm |
| Pad Size | |
| Wafer Thickness | 100μm +/- 10μm |
| Wafer Diameter | 150 mm (6 inch) |
| Gross Die | 1200 EA |
| Front Metallization | |
| Back Metallization |
