1200V, 80m Ohm N-Channel SiC MOSFET

1200V 80 mOhm N-Channel SiC MOSFET

Features

  • Optimized for high-frequency, high- efficiency applications
  • Extremely low gate charge and output capacitance
  • Low gate resistance for high-frequency
  • switching
  • Normally-off operations at all temperatures
  • Ultra-low on-resistance

Applications

  • High-frequency applications
  • Solar Inverters
  • Switch Mode Power Supplies
  • UPS
  • Motor Drives
  • High Voltage DC/DC Converters
  • Battery Chargers
  • Induction Heating

Product Summary

Characteristic Value Unit
VDS 1200 V
Typical RDS(ON) 80 mOhm
ID (TC    100 °C) 25 A

Maximum Ratings(TJ=25℃)

Characteristic Symbol Conditions Value Unit
Drain-Source Voltage VDS VGS  = 0 V 1200 V
Continuous Drain Current ID VGS  = 20 V 35 A
Gate-Source Voltage VGS Recommended DC operating values -5 to +20 V
Operating Junction Temperature TJ -40 to +175 ℃
Storage Temperature TSTG -40 to +175 ℃

Electrical Characteristics in C/P test(TJ=25℃)

Characteristic Symbol Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 µA 1200 V
Zero Gate Voltage Drain Current VF VDS = 1200, VGS = 0 V 1 100 μA
Gate Leakage Current IGSS,F VGS = 22 V, VDS = 0 V 100 nA
IGSS,R VGS = -6 V, VDS = 0 V 100
Drain-Source On-State Resistance RDS(ON) ID = 20 A, VGS = 20 V 80 100 m
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 10 mA 1.8 2.8 4.0 V

Chip Parameters and Die Drawing

Chip Size (with S/L) 2500 μm X 2500 μm
Pad Size
Wafer Thickness 100μm +/- 10μm
Wafer Diameter 150 mm (6 inch)
Gross Die 1200 EA
Front Metallization
Back Metallization
All Information given here is reliable to our best knowledge. No responsibility is assumed for possible inaccuracies or omissions. Specifications and external appearances are subject to change without notice.