Features
- 15mm pitch 9pts(EE=4mm)
- Thickness by FT-IR
- Carrier Concentration by Hg-CV
Parameter
| Item | Specification | Tolerance | Typical | Remark |
| Diameter | 6”(150mm) | – | – | |
| Poly-type | 4H | – | – | |
| Surface | (0001) Silicon face | – | – | |
| Off orientation | 4 degree-off | – | – | |
| Conductivity | N-type | – | – | |
| Dopant | Nitrogen | – | – | |
| Carrier concentration | 1E15 ~ 3E16/cm3 | ±12% ~±20% | ±8% | All Means, points |
| Epi Thickness | 5μm – 30μm | ±8%~ ±10% | ±6% | |
| PDD | 2.0 /cm2 | – | 0.3 /cm2 | (THK 5μm-30μm) |
| BPD 2mm yield | > 92% | – | – |
Standard epitaxial structure
| NO. | EPI Layer | Thickness (μm) | Dopant | Carrier Concentration (1/cm3) |
| 1 | SiC n- doping layer | 20 | n-type | 8×1015 |
| 2 | SIC Substrate | – | n-type | – |
| NO. | EPI Layer | Thickness (μm) | Dopant | Carrier Concentration (1/cm3) |
| 1 | SiC n- doping layer | 14 | n-type | 5×1015 |
| 2 | SIC Substrate | – | n-type | – |
All Information given here is reliable to our best knowledge. No responsibility is assumed for possible inaccuracies or omissions. Specifications and external appearances are subject to change without notice.