SiC Epitaxy

Features

  • 15mm pitch 9pts(EE=4mm)
  • Thickness by FT-IR
  • Carrier Concentration by Hg-CV

Parameter

Item Specification Tolerance Typical Remark
Diameter 6”(150mm)
Poly-type 4H
Surface (0001) Silicon face
Off orientation 4 degree-off
Conductivity N-type
Dopant Nitrogen
Carrier concentration 1E15 ~ 3E16/cm3 ±12% ~±20% ±8% All Means, points
Epi Thickness 5μm – 30μm ±8%~ ±10% ±6%
PDD 2.0 /cm2  0.3 /cm2 (THK 5μm-30μm)
BPD 2mm yield > 92%

Standard epitaxial structure

NO. EPI Layer Thickness (μm) Dopant Carrier Concentration (1/cm3)
1 SiC n- doping layer 20 n-type 8×1015
2 SIC Substrate n-type
NO. EPI Layer Thickness (μm) Dopant Carrier Concentration (1/cm3)
1 SiC n- doping layer 14 n-type 5×1015
2 SIC Substrate n-type